| PART |
Description |
Maker |
| 1.4KESD48A 1.4KESD48AE3 1.4KESD48E3 1.4KESD43A 1.4 |
AXIAL-LEAD TVS
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 400; Vwm (V): 110; VC (V): 243; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 100; VC (V): 222; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 10; VC (V): 24.7; ID (µA): 1; Tol (%): 5;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 10; VC (V): 21.1; ID (µA): 1; Tol (%): 10;
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 120; VC (V): 267; ID (µA): 1; Tol (%): 10; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 12; VC (V): 28; ID (µA): 1; Tol (%): 5; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 110; VC (V): 213; ID (µA): 1; Tol (%): 5; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 1400; Vwm (V): 11; VC (V): 27.1; ID (µA): 1; Tol (%): 10; 1400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
Transient Voltage Suppressor; Package: DO-35; Ppp (W): 400; Vwm (V): 100; VC (V): 222; ID (µA): 1; Tol (%): 10; 1400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AH
|
MICROSEMI CORP-SCOTTSDALE
Microsemi, Corp.
Microsemi Corporation
|
| CM75TF-28H |
Six-IGBT IGBTMOD 75 Amperes/1400 Volts 75 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| 1214-55 |
55 W, 28 V, 1200-1400 MHz common base transistor
55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| HUF76132S3S HUF76132P3 FN4553 76132P |
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N沟道,逻辑电平,UltraFET功率MOS场效应管)
Dual, Precision JFET High Speed Operational Amplifier; Package: SOIC; No of Pins: 8; Temperature Range: Industrial
75A 30V 0.011 Ohm N-Channel Logic Level UltraFET Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| R5021013 R5030413 R5031413 R5031213 R5031013 R5020 |
Fast Recovery Rectifier (125 Amperes Average 1400 Volts)
Fast Recovery Rectifier (125 Amperes Average 1400 Volts) 125 A, 600 V, SILICON, RECTIFIER DIODE, DO-8
Fast Recovery Rectifier (125 Amperes Average 1400 Volts) 快速恢复整流器（一百二十五安培平均1400伏特
Fast Recovery Rectifier (125 Amperes Average 1400 Volts) 125 A, 1400 V, SILICON, RECTIFIER DIODE, DO-8
Fast Recovery Rectifier (125 Amperes Average 1400 Volts) 125 A, 200 V, SILICON, RECTIFIER DIODE, DO-8
1600V, 125A fast recovery single diode
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| 100C1032-TNC 100C1032 100C1032-BNC 100C1032-SMA |
Medium Power PIN Diode SP2T 100 MHz - 1400 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 0.5 dB INSERTION LOSS
DAICO Switches SPST, SP2T
|
DAICO INDUSTRIES INC
DAICO[DAICO Industries, Inc.]
|
| MAAMSS0045 MAAMSS0045TR-3000 MAAMSS0045SMB |
1400 MHz - 2000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
HIGH DYNAMIC RANGE LOW NOISE AMPLIFIER 1400 - 2000 MHZ
|
MACOM[Tyco Electronics]
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| RHRU75120 FN3408 |
75A/ 1200V Hyperfast Diode
75A, 1200V Hyperfast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| MCD56 MCD56-08IO1 MCD56-08IO1B MCD56-08IO8B MCC56 |
Thyristor and Rectifiers Modules
Thyristor Modules /Diode Modules 100 A, 1400 V, SCR, TO-240AA
Thyristor Modules /Diode Modules 100 A, 1200 V, SCR, TO-240AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
|
